tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company features ? very low fom r ds(on) q g ? 100 % avalanche tested ? rohs compliant applications ? switch mode power supply (smps) ? uninterruptible power supply (ups) ? power factor correction (pfc) device marking and package information device package marking tpv 65r 080c to -3 pn 65 r 080 c tpw 65 r080c to -247 65 r 080 c absolute maximum ratings t c = 25 oc, unless otherwise noted parameter symbol value unit drain -source voltage (v gs = 0 v) v dss 650 v cont inuous drain cu rrent i d 47 a pulsed drain current (note1 ) i dm 141 a gate -source voltage v gss 30 v single pulse avalanche energy (note2) e as 1120 mj avalanche current (note1 ) i ar 8.7 a repetitive avalanche energy (note1 ) e ar 1.76 mj power dissipation (t c = 25oc ) p d 390 w operating junction and storage temperature range t j , t stg -55~+150 oc thermal resistance parameter symbol value unit thermal resistance, junction- to -case r thjc 0.32 k/w thermal resistance, junction- to -ambient r thja 62 650v super-junction power mosfet 1 a l l d a t a s h e e t . c o m
tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company specifications t j = 25oc , unless otherwise noted parameter symbol test conditions value unit min. typ. max. static drain -source breakdown voltage v (br)dss v gs = 0v, i d = 250a 650 -- -- v zero gate voltage drain current i dss v ds = 650v , v gs = 0v, t j = 25 oc -- -- 1 a v ds = 650v , v gs = 0v, t j = 150oc -- -- 100 gate -source leakage i gss v gs = 3 0v -- -- 100 na gate -source threshold voltage v gs( th ) v ds = v gs , i d = 250a 2.5 -- 4.5 v drain -source on -resistance (note3 ) r ds(on) v gs = 10v, i d = 20a -- 65 80 m? forward transconductance (note3 ) g fs v ds = 10v, i d = 20a -- 40 -- s dynamic input capacitance c iss v gs = 0v, v ds = 50v, f = 1.0mhz -- 5098 -- pf output capacitance c oss -- 225 -- reverse transfer capacitance c rss -- 6.2 -- total gate charge q g v dd = 520v , i d = 47a , v gs = 10v -- 90 -- nc gate -source charge q gs -- 24 -- gate -drain charge q gd -- 30 -- turn -on delay time t d(on) v dd = 400v , i d = 26a , r g = 1.7 ? -- 16 -- ns turn -on rise time t r -- 12 -- turn -off delay time t d(off) -- 83 -- turn -off fall time t f -- 5 -- drain -source body diode characteristics continuous body diode current i s t c = 25 oc -- -- 47 a pulsed diode forward current i sm -- -- 141 body diode voltage v sd t j = 25 oc, i sd = 47a , v gs = 0v -- 0.9 1.2 v reverse recovery time t rr v r = 400v , i f = 26a, di f / dt = 100a/ s -- 720 -- ns reverse recovery charge q rr -- 19 -- c peak reverse recovery current i rrm -- 52 -- a notes 1. repetitive rating: pulse width limited by maximum junction temperature 2. i as = 15a, v dd = 50v, r g = 25?, starting t j = 25 c 3. pulse test: pulse width 300s, duty cycle 1% 2 a l l d a t a s h e e t . c o m
tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 0 10 20 30 40 50 60 50 55 60 65 70 75 80 85 90 0 10 20 30 40 50 60 70 3 typical characteristics t j = 25 o c, unless otherwise noted 0.2 0.4 0.6 0.8 1 1.2 t j = 25 o c t j = 150 o c 0 2 4 6 8 10 0 20 40 60 80 100 v ds = 120v v ds = 520v v gs = 0 f = 1mhz c iss c oss c rss figure 1. output characteristics figure 2. transfer characteristics 0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 12 14 16 18 20 20v 10v 6v 5.5v 5v 4.5v 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 7 8 9 10 t j = 25 o c t j = 150 o c v ds , drain- to -source voltage (v) v gs , gate- to -source voltage (v) v gs = 10v t j = 25 o c figure 3. on-resistance vs. drain current figure 4. capacitance 10 4 10 3 10 2 10 1 10 0 i d , drain current (a) v ds , drain- to -source voltage (v) figure 5. gate charge figure 6. body diode forward voltage i s , source current (a) capacitance (pf) i d , drain current (a) v gs , gate- to -source voltage (v) r ds(on) , on-resistance ( m ) i d , drain current ( a) q g , total gate charge ( nc ) v sd , source- to -drain voltage (v) 10 3 10 2 10 1 10 0 10 -1 10 -2 10 5 a l l d a t a s h e e t . c o m
tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company -1.2 -1 -0.8 -0.6 -0.4 -0.2 0 0.2 0.4 0.6 -100 -50 0 50 100 150 200 i d = 250a 4 typical characteristics t j = 25 o c, unless otherwise noted 10 -4 10 -3 10 -2 10 -1 10 0 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 figure 7. on -resistance vs. temperature figure 8. threshold voltage vs. temperature t p , pulse width (s ) t j , junction temperature ( o c) t j , junction temperature ( o c) r ds(on) , (normalized) v gs( th ) , (variance) z thjc , thermal impedance (k/w) figure 9. transient thermal impedance 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 v gs = 10v i d = 20a d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse a l l d a t a s h e e t . c o m
tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 5 figure a gate charge test circuit and waveform figure b resistive switching test circuit and waveform figure c unclamped inductive switching test circuit and waveform a l l d a t a s h e e t . c o m
tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 6 to -3pn a l l d a t a s h e e t . c o m
tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 7 to -247 a l l d a t a s h e e t . c o m
tpv65r080c, TPW65R080C v3.0 www.tsinghuaicwx.com wuxi unigroup microelectronics company 8 disclaimer all product specifications and data are subject to change without notice. for documents and material available from this datasheet, wuxi unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. no license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of wuxi unigroup. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling wuxi unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify wuxi unigroup for any damages arising or resulting from such use or sale. wuxi unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. the product specifications do not expand or otherwise modify wuxi unigroups terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. wuxi unigroup microelectronics co ., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all wuxi unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. information (including circuit diagrams and circuit parameters) herein is for example only. it is not guaranteed for volume production. wuxi unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. a l l d a t a s h e e t . c o m
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